APTGL180A1202G APTGL180A1202G C rev 1 october, 2012 www.microsemi.com 1-5 all ratings @ t j = 25c unless otherwise specified absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter breakdown voltage 1200 v t c = 25c 220 i c continuous collector current t c = 80c 180 i cm pulsed collector current t c = 25c 300 a v ge gate C emitter voltage 20 v p d maximum power dissipation t c = 25c 750 w rbsoa reverse bias safe operating area t j = 125c 300a @ 1100v these devices are sensitiv e to electrostatic discharge. proper handling procedures should be followe d. see application note apt0502 on www.microsemi.com 12 3 4 18 10 9 68 7 13 1614 1512 17 11 5 pins 1/2/3/4 ; 5/6/7/8 ; 11/12/13/14/15/16 must be shorted together v ces = 1200v i c = 180a @ tc = 80c application ? welding converters ? switched mode power supplies ? uninterruptible power supplies ? motor control features ? trench + field stop igbt 4 technology - low voltage drop - low leakage current - low switching losses - soft recovery parallel diodes - low diode vf - rbsoa and scsoa rated ? kelvin emitter for easy drive ? very low stray inductance ? high level of integration benefits ? outstanding performance at high frequency operation ? stable temperature behavior ? very rugged ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? easy paralleling due to positive t c of v cesat ? rohs compliant phase leg trench + field stop igbt4 power module downloaded from: http:///
APTGL180A1202G APTGL180A1202G C rev 1 october, 2012 www.microsemi.com 2-5 electrical characteristics symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 1200v 300 a t j = 25c 1.8 2.2 v ce(sat) collector emitter saturation voltage v ge = 15v i c = 150a t j = 150c 2.2 v v ge(th) gate threshold voltage v ge = v ce , i c = 5.5 ma 5.0 5.8 6.5 v i ges gate C emitter leakage current v ge = 20v, v ce = 0v 200 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 9.3 c oes output capacitance 0.58 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 0.5 nf q g gate charge v ge = -8v / 15v ; v ce =600v i c =150a 0.85 c t d(on) turn-on delay time 130 t r rise time 20 t d(off) turn-off delay time 300 t f fall time inductive switching (25c) v ge = 15v v ce = 600v i c = 150a r g = 3 ? 45 ns t d(on) turn-on delay time 150 t r rise time 35 t d(off) turn-off delay time 350 t f fall time inductive switching (150c) v ge = 15v v ce = 600v i c = 150a r g = 3 ? 80 ns e on turn-on switching energy t j = 150c 13.5 mj e off turn-off switching energy v ge = 15v v ce = 600v i c = 150a r g = 3 ? t j = 150c 14.5 mj i sc short circuit data v ge 15v ; v bus = 900v t p 10s ; t j = 150c 600 a r thjc junction to case thermal resistance 0.20 c/w reverse diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1200 v i rm maximum reverse leakage current v r =1200v 100 a i f dc forward current tc = 80c 150 a t j = 25c 1.7 2.2 v f diode forward voltage i f = 150a v ge = 0v t j = 150c 1.65 v t j = 25c 155 t rr reverse recovery time t j = 150c 300 ns t j = 25c 13.3 q rr reverse recovery charge t j = 150c 27.6 c t j = 25c 5.9 e rr reverse recovery energy i f = 150a v r = 600v di/dt =3400a/s t j = 150c 11.5 mj r thjc junction to case thermal resistance 0.38 c/w downloaded from: http:///
APTGL180A1202G APTGL180A1202G C rev 1 october, 2012 www.microsemi.com 3-5 thermal and package characteristics symbol characteristic min typ max unit v isol rms isolation voltage, any terminal to case t =1 min, 50/60hz 4000 v t j operating junction temperature range -40 175 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m4 2 3 n.m wt package weight 75 g sp2 package outline (dimensions in mm) typical performance curve hard switching zcs zvs 0 30 60 90 120 150 180 0 40 80 120 160 200 240 i c (a) fmax, operating frequency (khz) v ce =600v d=50% r g =3 ? t j =150c tc=75c operating frequency vs collector current maximum effective transient thermal impedance, junction to case vs pulse duration d = 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration in seconds thermal impedance (c/w) diode forward characteristic of diode t j =25c t j =150c 0 50 100 150 200 250 300 0 0.5 1 1.5 2 2.5 v f (v) i f (a) downloaded from: http:///
APTGL180A1202G APTGL180A1202G C rev 1 october, 2012 www.microsemi.com 4-5 output characteristics (v ge =15v) t j =25c t j =150c 0 50 100 150 200 250 300 01234 v ce (v) i c (a) output characteristics v ge =15v v ge =19v v ge =9v 0 50 100 150 200 250 300 01234 v ce (v) i c (a) t j = 150c transfert characteristics t j =25c t j =150c 0 50 100 150 200 250 300 5678910111213 v ge (v) i c (a) energy losses vs collector current eon eoff 0 10 20 30 40 0 50 100 150 200 250 300 i c (a) e (mj) v ce = 600v v ge = 15v r g = 3. ? t j = 150c eon eoff 0 10 20 30 40 50 0 5 10 15 20 gate resistance (ohms) e (mj) v ce = 600v v ge =15v i c = 150a t j = 150c switching energy losses vs gate resistance reverse bias safe operating area 0 100 200 300 400 0 300 600 900 1200 v ce (v) i c (a) v ge =15v t j =150c r g =13 ? maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.04 0.08 0.12 0.16 0.2 0.24 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) igbt downloaded from: http:///
APTGL180A1202G APTGL180A1202G C rev 1 october, 2012 www.microsemi.com 5-5 disclaimer the information contained in the document (unless it is publicly available on the web without access restrictions) is proprietary and confidential information of microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of microsemi. if the recipient of this document has entered into a disclosure agreement with microsemi, then the ter ms of such agreement will also apply. this document and the information contained herein may not be modified, by any person other than authorized personnel of microsemi. no license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication , inducement, estoppels or otherwise. any license under such intellectual property rights must be approved by microsemi in writing signed by an officer of microsemi. microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. this product has been subject to limited testing and should not be used in conjunction with life- support or other mission-critical equipment or applications. microsemi assumes no liability whatsoever, and microsemi disclaims any express or implied warranty, relating to sale and/or use of microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or custo mers final application. user or customer shall not rely on any data and performance specifications or parameters provided by microsemi. it is the customers and users responsibility to independently determine suitability of any microsemi product and to test and verify the same. the information contained herein is provided as is, where is and with all faults, and the entire risk associated with such information is entirely with the user. microsemi specifically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. the product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp life support application seller's products are not designed, intended, or authorized for use as components in systems intended for space, aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other application in which the failure of the seller's product could create a situation where personal injury, death or property damage or loss may occur (collectively "life support applications"). buyer agrees not to use products in any life support applications and to the extent it does it shall conduct extensive testing of the product in such applications and further agrees to indemnify and hold seller, and its officers, employees, subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, dam ages and expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage or otherwise associated with the use of the goods in life support applications, even if such claim includes allegations that seller was negligent regarding the design or manufacture of the goods. buyer must notify seller in writing before using sellers products in life support applications. seller will study with buyer alternative solutions to meet buyer application specification based on sellers sales conditions applicable for the new proposed specific part. downloaded from: http:///
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